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回路シミュレータで使用する半導体デバイスモデルの研究開発

The design of integrated circuits (IC) containing semiconductor devices involves design verification by circuit simulation. In circuit simulation, the circuit’s behavior is predicted and optimized before the actual IC fabrication. Circuit simulation tools contain compact models that describe the electrical characteristics of semiconductor devices. Therefore, accurate circuit design requires accurate compact models. My research is on the development of these compact models especially for metal-oxide-semiconductor (MOS) transistors. Quantum computers require MOS transistors to be operated at cryogenic temperature levels. At such extreme temperatures, different physical phenomena occur within the transistor. These phenomena like energy-band narrowing, incomplete dopant ionization, etc. should be described by physics-based equations and implemented in the transistor compact model. Such model will ensure correct IC design not only for quantum computers but also for ICs used in space and deep-ocean explorations, where temperature becomes cryogenic.